Novel Devices Employing Epitaxial Wide Bandgap Semiconductors

Novel Devices Employing Epitaxial Wide Bandgap Semiconductors
Author :
Publisher :
Total Pages : 274
Release :
ISBN-10 : OCLC:437109334
ISBN-13 :
Rating : 4/5 ( Downloads)

Book Synopsis Novel Devices Employing Epitaxial Wide Bandgap Semiconductors by : Zvonimir Z. Bandic

Download or read book Novel Devices Employing Epitaxial Wide Bandgap Semiconductors written by Zvonimir Z. Bandic and published by . This book was released on 2000 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:


Novel Devices Employing Epitaxial Wide Bandgap Semiconductors Related Books

Novel Devices Employing Epitaxial Wide Bandgap Semiconductors
Language: en
Pages: 274
Authors: Zvonimir Z. Bandic
Categories:
Type: BOOK - Published: 2000 - Publisher:

DOWNLOAD EBOOK

Epitaxial Growth of Novel Wide Bandgap Semiconductors and Metallic Diborides on Silicon
Language: en
Pages: 374
Authors: Radek Roucka
Categories: Crystal growth
Type: BOOK - Published: 2004 - Publisher:

DOWNLOAD EBOOK

Wide Bandgap Semiconductor Power Devices
Language: en
Pages: 420
Authors: B. Jayant Baliga
Categories: Technology & Engineering
Type: BOOK - Published: 2018-10-17 - Publisher: Woodhead Publishing

DOWNLOAD EBOOK

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior
Wide Bandgap Semiconductor-based Electronics
Language: en
Pages: 0
Authors: Fan Ren
Categories: Gallium arsenide semiconductors
Type: BOOK - Published: 2020 - Publisher:

DOWNLOAD EBOOK

"Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performanc
Epitaxial Growth, Characterization and Application of Novel Wide Bandgap Oxide Semiconductors
Language: en
Pages: 136
Authors: Jeremy West Mares
Categories: Molecular beam epitaxy
Type: BOOK - Published: 2010 - Publisher:

DOWNLOAD EBOOK

In this work, a body of knowledge is presented which pertains to the growth, characterization and exploitation of high quality, novel II-IV oxide epitaxial film