Inductively-coupled Plasma Reactive Ion Etching (ICP-RIE) with HBR and Other Etch Chemistries of SI/SIGE-based Resonant Interband Tunnel Diodes Grown by Low Temperature Molecular Beam Epitaxy (LT-MBE)

Download or read book Inductively-coupled Plasma Reactive Ion Etching (ICP-RIE) with HBR and Other Etch Chemistries of SI/SIGE-based Resonant Interband Tunnel Diodes Grown by Low Temperature Molecular Beam Epitaxy (LT-MBE) written by Si-Young Park and published by . This book was released on 2006 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: The International Technology Roadmap for Semiconductors (ITRS) forecasts that current semiconductor technology based on the mainstream silicon CMOS platform is approaching its scaling of limit. One emerging technology which may augment CMOS and extend its operational lifetime is tunneling devices together with transistors. Tunnel diode based circuits have superior performance regarding high speed operation concurrently with low power consumption. Si-based resonant interband tunnel diodes (RITD) developed by this research group that are grown epitaxially using low temperature molecular beam epitaxy (LT-MBE), now enable monolithic integration with Si CMOS and SiGe technology. This thesis focuses on the study of the plasma damage from inductively- coupled plasma reactive ion etching (ICP-RIE) processes using several different process gases, various ICP powers and substrate bias powers compared to wet etching techniques on Si-based diodes grown using low temperature molecular beam epitaxial (LT-MBE). Of particular interest and promise is an HBr etch chemistry that provides hydrogen passivation while etching. The minimization from incident ion damage and residual surface contamination during dry plasma etching is one of the key issues in modern VLSI manufacturing, especially as transistors/devices are scaled to below 50 nm lengths. Many researchers, therefore, are still developing many advanced techniques to reduce and minimize plasma damage created by dry plasma etching process.