This work presents progress in the root-cause analysis of power saturation mechanisms in continuous wave (CW) driven GaAs-based high-power broad area diode lase

This work focuses on the development of AlGaAs-based diode laser (DL) bars optimized for reaching highest powers and efficiencies at low operation temperatures.

Edge-emitting quantum-well diode lasers based on GaAs combine a high conversion efficiency, a wide range of emission wavelengths covering a span from 630 nm to

GaAs-based high power diode bars produce wavelengths in the range of 780 to 980 nm and are widely used for pumping a broad range of rare earth doped solid-state