Boron Activation and Diffusion in Polycrystalline Silicon with Flash-assist Rapid Thermal Annealing

Download or read book Boron Activation and Diffusion in Polycrystalline Silicon with Flash-assist Rapid Thermal Annealing written by Sidan Jin and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: The rigorous scaling in dimensions for future generations of transistor fabrication demands ever steeper requirements for dopant solubility with minimal diffusion. Advanced annealing techniques such as flash-assist rapid thermal processing now allow effective anneal times up to three orders of magnitude less than conventional methods. At the same time, advanced characterization techniques can now provide three-dimensional compositional analysis of materials systems. While there has been extensive research for flash annealing of B doped crystalline Si, the effects on polycrystalline Si have been less studied, but is of equal importance. It continues to be prevalent in device fabrication for current and future technologies. The morphology and evolution of grains in heavily B-doped poly-Si is studied under high temperature millisecond annealing conditions using plan-view transmission electron microscopy. High activation with low thermal budgets has allowed study of a very fine-grained microstructure of highly activated B doped poly-Si. 3D atom probe tomography allowed direct quantitative measurement of the segregation coefficient of B to the grain boundaries, and its diffusion behavior has been accurately modeled. Activation, mobility, and deactivation of B in flash annealed polycrystalline Si was also explored using Hall effect. By combining electrical, compositional and microstructural measurements, a model has been developed to describe the activation, mobility, and diffusion behavior of B in poly-Si films with average hole concentrations greater than 5\U+00d7\1019 cm−3.